Mobility and Sheet Charge in High-Electron Mobility Transistor Quantum Wells From Photon-Induced Transconductance

Study of factors limiting electron mobility in InSb quantum wells

We observe a significant increase in InSb quantum-well mobility when remote doping of Al0.09In0.91Sb barriers is accomplished by three layers, rather than one layer, of Si d doping. At 7 K, the electron mobility in single quantum-well structures grown on GaAs substrates is as high as 280 000 cm/V s with an electron density of 2.33310 cm. The density of oriented abrupt steps and square-mound fea...

Quantum Confinement in High Electron Mobility Transistors

Modulation-doped semiconductor nanostructures exhibit extraordinary electrical and optical properties that are quantum mechanical in nature. The heart of such structures lies in the heterojunction of two epitaxially grown semiconductors with different band gaps. Quantum confinement in this heterojunction is a phenomenon that leads to the quantization of the conduction and the valence band into ...

Surface morphology of Al0.3Ga0.7N/Al2O3-high electron mobility transistor structure.

We present surface properties of buffer films (AIN and GaN) and Al0.3Gao.zN/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AIN interlayer grown on High Temperature (HT)-AIN buffer/Al2O3 substrate and Al2O3 substrate. We have found that the GaN surface morphology is step-flow in character and the density of dislocations was about 10(8)-10(9) cm(-2). The AFM measurements a...

MOCVD growth of GaN-based high electron mobility transistor structures

High-Mobility Nanotube Transistor Memory

A high-mobility (9000 cm2/V‚s) semiconducting single-walled nanotube transistor is used to construct a nonvolatile charge-storage memory element operating at room temperature. Charges are stored by application of a few volts across the silicon dioxide dielectric between nanotube and silicon substrate, and detected by threshold shift of the nanotube field-effect transistor. The high mobility of ...